The unique process used to create the new Intel Atom relies on new 3-D transistor
technology, which Intel calls the "Tri-Gate.
Intel will introduce a revolutionary 3-D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed "Ivy Bridge.
Intel announces a major technical breakthrough and historic innovation in microprocessors: the world's first 3-D transistors, called Tri-Gate, in a production technology.
Intel introduced a "revolutionary" 3-D transistor that is processed with 22 nanometer technology.
The 3-D transistor, named Tri-Gate, uses an incredibly thin three-dimensional silicon fin that rises up vertically from the silicon substrate.
John Pitzer, analyst at Credit Suiss also said the Tri-Gate 3-D transistor will help Intel become successful in non-traditional markets such as tablets, smartphones, and says it will happen within the next 12 months.
Semiconductor giant Intel announced a new 3-D transistor
design called Tri-Gate, which allows for higher performance and energy efficiency due to lower voltage leakage.
The new DRAM technology breakthroughs include a 3-D transistor
technology, recess channel array transistor (RCAT), and a new concept architecture process.
This development provides the first glimpse of a new era of non-planar 3-D transistor
designs that Intel and the semiconductor industry must implement to maintain the pace of Moore's Law beyond this decade.
The results place non-planar, 3-D transistor
structures among the promising nanotechnology innovations that we will use to extend silicon scaling and Moore's Law well into the future.
FinFET-ready Design Tools The shift from planar to FinFET-based 3-D transistors is a significant change that requires close R&D collaboration among tool developers, foundries and early adopters to deliver a strong EDA foundation.
Very early on, we successfully demonstrated the power and performance benefits of using FinFET 3-D transistors," said Dr.