Tri-Gate transistor

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Tri-Gate transistor

An Intel 3D transistor design introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain channel, called a "fin," instead of residing on top of the channel in the traditional 2D planar design. In addition, multiple fins are used, which provide greater control of each state. See Ivy Bridge, transistor and transistor concept.

Better Performance
Because the gate wraps around the fin (channel), the Tri-Gate transistor provides greater performance and less current leakage. Multiple fins are ganged together through the same gate to enable more current in the "on" state and less current in the "off" state. (Images courtesy of Intel Corporation.)


Six Fins Each
The matrix (center) on this chip is an actual image of three transistors and six fins. The drains from the first become the sources for the second, and so on. Metal layers interconnect all the source, drain and gate elements to complete the circuit design. (Image courtesy of Intel Corporation.)
References in periodicals archive ?
The unique process used to create the new Intel Atom relies on new 3-D transistor technology, which Intel calls the "Tri-Gate.
Intel will introduce a revolutionary 3-D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed "Ivy Bridge.
Intel announces a major technical breakthrough and historic innovation in microprocessors: the world's first 3-D transistors, called Tri-Gate, in a production technology.
Intel introduced a "revolutionary" 3-D transistor that is processed with 22 nanometer technology.
The 3-D transistor, named Tri-Gate, uses an incredibly thin three-dimensional silicon fin that rises up vertically from the silicon substrate.
John Pitzer, analyst at Credit Suiss also said the Tri-Gate 3-D transistor will help Intel become successful in non-traditional markets such as tablets, smartphones, and says it will happen within the next 12 months.
Semiconductor giant Intel announced a new 3-D transistor design called Tri-Gate, which allows for higher performance and energy efficiency due to lower voltage leakage.
The new DRAM technology breakthroughs include a 3-D transistor technology, recess channel array transistor (RCAT), and a new concept architecture process.
This development provides the first glimpse of a new era of non-planar 3-D transistor designs that Intel and the semiconductor industry must implement to maintain the pace of Moore's Law beyond this decade.
The results place non-planar, 3-D transistor structures among the promising nanotechnology innovations that we will use to extend silicon scaling and Moore's Law well into the future.
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Very early on, we successfully demonstrated the power and performance benefits of using FinFET 3-D transistors," said Dr.