Hybrid Memory Cube

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Hybrid Memory Cube

A memory module technology from the Hybrid Memory Cube Consortium (HMCC), spearheaded by Micron and Samsung, that stacks chips vertically rather than horizontally. Finalized in 2013, Hybrid Memory Cubes (HMCs) provide 15 times the bandwidth of DDR3 chips while consuming 70% less power and 90% less space. Like DRAM, HMCs lose their content without power.

Initially used in supercomputers and high-speed servers, HMC memory is expected to migrate to all types of computing devices. See dynamic RAM, memory module and via.


3D Stacking
DRAM layers are stacked over a logic layer and connected with "vias" (corner cutout) that run through the silicon. This compact architecture is faster and more energy efficient than conventional DRAM modules. (Image courtesy of the HMC Consortium, www.hybridmemorycube.org)
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Toshiba is currently migrating all client, data center and enterprise SSDs to the newest BiCS FLASH 64-layer 3D memory.
Also, in using our 3D memory technology here, we can more proactively cope
Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market.
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events, universities and organizations around the world, producing custom lines of 3D Memory Shadow Boxes, blown glass and reverse painted ornaments, specializing in detailed poly resin Sculptures and Figurines.
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Nanoelectronics research center imec and Excico, a global leader in semiconductor laser annealing, have successfully demonstrated the application of laser thermal anneal (LTA) to boost the current in vertical polysilicon channel devices for 3D memory.
This note reports on the feasibility of a novel 3D memory consisting of a high-speed silicon short-term cache memory and a long-term high density MO memory.
Other SEMATECH papers will showcase advances in metrology techniques, photoresist shrinkage, nanopolishing, scatterometry, through-silicon via (TSV) reveal, transmission electron microscopy (TEM) tomography, critical dimension atomic force microscopy (CD-AFM), critical dimension X-ray scattering (CD-SAXS)--a potential metrology technique for FinFET and 3D memory structures--and a through-focus scanning optical microscopy (TSOM) technique being explored for future defect inspection or to enable high-volume manufacturing of high-aspect ratio features.
Toshiba and SanDisk are expected to support 3D memory production with leading-edge manufacturing equipment for lithography, deposition and etching through joint ventures.
The demo will highlight future and potential capabilities and showcase a high-performance, low-power 3D memory system using a double-sided IC package.