FinFET

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FinFET

(FIN Field Effect Transistor) A transistor architecture that uses raised channels, called "fins," from source to drain. Intel's Tri-Gate transistors are a type of FinFET. See Tri-Gate transistor, FET and MOSFET.
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broader range of differentiated leading-edge 3D transistor and RF technologies,
We can now offer our customers a broader range of differentiated leading-edge 3D transistor and radio frequency (RF) technologies, and we will also improve our design ecosystem to accelerate time-to-revenue for our customers.
We can now offer our customers a broader range of differentiated leading-edge 3D transistor and RF technologies, and we will also improve our design ecosystem to accelerate time-to-revenue for our customers.
20nm Roadmap at TSMC and UMC Stock code 2303 2330 Company UMC TSMC Development Acquire IBM licensing Pilot production status on 20nm and FinFET projected late 3D transistor this year or processes early next year.
The Tri-Gate 3D transistor will provide a big boost to Intel's x86 architecture against ARM is whatDoug Freedman, analyst at Gleacher & Company, says will happen.
The 3D transistor design intrinsically operates at a lower voltage with minimal current leakage, which translates into longer battery life for mobile applications or less power consumption for plugged-in applications such as networking chips in datacenters.
Intel's Tri-Gate technology is a proprietary 3D transistor technology with the gate surrounding the channel on all 3 sides of the transistor.
The 3D transistor technology replaces a flat, 2D transistor arrangement with a 3D structure that rises up from the silicon substrate.
Second, Z-RAM technology is now constructed on bulk silicon - without the requirement for expensive silicon on insulator (SOI) substrates - by using the 3D transistor structures preferred by the major DRAM manufacturers.
We have a long collaboration history with Mentor Graphics to provide innovative solutions in generations of process nodes," said Suk Lee, TSMC Senior Director, Design Infrastructure Marketing Division, "TSMC's partnership with Mentor Graphics on 10nm FinFET helps our mutual customers take advantage of the power, performance and density benefits for this breakthrough 3D transistor technology.
The shapes of these SPS and 3D transistor structures are new to the semiconductor industry, and control of their widths and profiles can be critical to device yield or performance.
One of the key technologies involved in the development of Samsung's 3D transistor is a recess channel array transistor (RCAT) that actually builds the DRAM cell three-dimensionally to minimize its size while increasing its density.