molecular-beam epitaxy(redirected from ATG instability)
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molecular-beam epitaxy[mə′lek·yə·lər¦bēm ′ep·ə‚tak·sē]
A technique of growing single crystals in which beams of atoms or molecules are made to strike a single-crystalline substrate in a vacuum, giving rise to crystals whose crystallographic orientation is related to that of the substrate. Abbreviated MBE.