The electronic image intensification camera will be based on the company's patented electron bombarded active pixel sensor
(EBAPS) digital imaging sensor for extreme low-light level detection.
In addition, the 130 nm Cu process allows the use of MIM capacitors and a reduced overall thickness of the active pixel sensor
(APS) structure, thus improving optical performance in a reduced pixel area.
To take full advantage of these new, stronger X-ray sources the new D8 QUEST and D8 VENTURE systems are both equipped with the new PHOTON 100 (TM ) detector, the first CMOS active pixel sensor
(CMOS APS) based detector available on the crystallography market.
With its binocular visor-projected display performance, the new system integrates a center-mounted ISIE -11 sensor based on Intevac Photonics patented advanced imaging sensor technology, known as the electron bombarded active pixel sensor
Also featured is the high performance, low power CMOS active pixel sensor
technology that is capable of producing CCD quality digital images in VGA format for video or still imaging of up to 30 frames/sec.
For this contract, Intevac will develop a GaAs Electron Bombarded Active Pixel Sensor
(GaAs EBAPS) low light level prototype camera.
Night Port[TM], a Digital Image Intensified Night Vision Viewer incorporating Intevac's Electron Bombarded Active Pixel Sensor
(EBAPS[R]) ISIE-11 (1600 x 1200) sensor, eMagin's color SXGA OLED-XL display, and Intevac Photonics IVS' IROC, provide a simultaneous 50x diagonal field of view of color symbology overlay and low light level night scene.
Our Electron Bombarded Active Pixel Sensor
("EBAPS") camera, which we are developing with the assistance of the National Institute of Standards and Technology ("NIST") and National Semiconductor, will bring night vision performance to a low cost, day-night, mega-pixel digital video format.
This camera will be developed in collaboration with CECOM utilizing a commercial/military Electron Bombarded Active Pixel Sensor
(EBAPS) technology being separately developed under a NIST contract.
Nakamura's selection for the Takayanagi Memorial Award for Encouragement was based upon a number of factors including his active pixel sensor
research and development that preceded the concept of modern CMOS image sensors in the early 1990's; his invention of novel readout methods for active pixel sensors
, and his leadership of the development of a CMOS image sensor for Super-Hi Vision (SHV) cameras.
MEMSCAP has already developed a number of sophisticated devices for its customers, including inertial sensors, relays, varactors, an artificial retina capable of movement and contour detection, and an integrated camera using active pixel sensor
3-megapixel (1280 x 1024) CMOS active pixel sensor
is dedicated to industrial vision and features both rolling and snapshot shutter.