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avalanche breakdown

   Also found in: Wikipedia 0.01 sec.
avalanche breakdown [′avĀ·ə‚lanch ′brāk‚dau̇n]
(electronics)
Nondestructive breakdown in a semiconductor diode when the electric field across the barrier region is strong enough so that current carriers collide with valence electrons to produce ionization and cumulative multiplication of carriers.


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The data for the Miller's avalanche breakdown model, for the recombination/ generation model parameters, for the charge carriers lifetime data, for the lattice parameters for isotropic semiconductors and for other global model parameters are taken from literature [3-7].
Packaged in a standard TO-257 package, these devices showed stable avalanche breakdown above 800 V.
 
 
 
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