BiCMOS technology enables high levels of integration, such that a single device can contain RF mixers, low-noise amplifiers, voltage controlled oscillators, gain-controlled amplifiers, and frequency synthesizers, as well as baseband analog functions (signal strength detectors and filters), and significant digital circuitry.
Atmel is also a leading provider of system-level integration semiconductor solutions using advanced CMOS, BiCMOS, bipolar and SiGe process technologies.
Companies Announce Licensing of Advanced BiCMOS Technology
In 1988 Fujitsu originally introduced BiCMOS LSIs for addressing wireless applications.
FME's Wireless Design Centre (EWDC), located in Frankfurt, Europe, provides the definition and circuit design for RF application semiconductors, using the new BiCMOS process.
Jazz Semiconductor is an independent pure-play wafer foundry focused primarily on specialty CMOS process technologies, including High Voltage CMOS, SiGe BiCMOS
and RFCMOS for the manufacture of highly integrated analog and mixed-signal semiconductor devices.
35ym Silicon-Germanium BiCMOS
technology enables designs of RF circuits with an operating frequency of up to 10 GHz combined with high-density digital parts on one single ASIC.
Mirics designed its product using Jazz Semiconductor's high-volume silicon germanium BiCMOS (SiGe BiCMOS) process to develop a high performance, low power consumption mobile broadcast receiver.
35-micron SiGe BiCMOS process platform, and utilizing its sophisticated analog and RF design flow and modeling infrastructure, Mirics engineers were able to achieve results quickly and achieve functional, first-pass silicon.