CMOS device

CMOS device

[′se‚mȯs di′vīs]
(electronics)
A device formed by the combination of a PMOS (p-type-channel metal oxide semiconductor device) with an NMOS (n-type-channel metal oxide semiconductor device). Derived from complementary metal oxide semiconductor device.
References in periodicals archive ?
Integrating a half-watt power amplifier (PA), low noise amplifier (LNA), antenna switch and all impedance matching networks into a single-chip/single-die CMOS device and assembled in a tiny 3x3mm QFN (Quad-Flat Non-Lead) package, the RFX1010 is the ideal RF front-end solution for both 920IP, as well as the emerging IEEE 802.
It is the same principle as in a CMOS device where the application of a voltage serves as an on/off switch that controls electron transport properties and changes electrical resistance from high (insulator) to low (conductor)," said Ramesh.
In the HOT technology, layer transfer process, block-level trench etch, and epitaxial regrowth were performed before conventional CMOS device process.
8V CMOS device packaged in 35 mm by 35 mm, 580-pin UBGA package.
The IC industry has now recognized the necessity of performing ultrafast measurements for accurate estimation of CMOS device degradation due to NBTI.
He was elected an IEEE Fellow in 1992 for leadership in and contributions to CMOS device and process technology.
It comes with a high-efficiency high-linearity PA providing 18dBm output power with three percent EVM at antenna port, a directional coupler and output power detector, impedance matching networks, harmonic filters, and a SP3T switch for antenna sharing between Wi-Fi and Bluetooth, integrated onto a single CMOS device.
Our Pyramid Production Probe solution is engineered to address the fundamental challenges associated with high-performance RF CMOS device probing.
and the Soitec Group (Euronext, Paris) today announced the results of their joint development effort to optimize CMOS device performance at the sub-65-nm nodes using strained silicon-on-insulator (sSOI) engineered substrates.
Modern CMOS device modeling requires that a high volume of measurements be performed to analyze process trends and identify data required for extraction of typical and corner-case device models.
MM8511 is World's First Fully-Integrated Frequency Source for SSCG; Monolithic CMOS Device Lowers EMI and Eliminates Crystals and PLLs