Toshiba has developed a fabrication process for HfSiON gate dielectric film for 65nm low power CMOS applications and confirmed its characteristic with an experimentally fabricated LSI with 50nm gate-length CMOS transistors
Metallic oxides of the hafnium family are believed to be excellent candidates for the 'high-k' dielectric material that will eventually replace silicon dioxide in the basic CMOS transistor
DRESDEN, Germany -- SUSS MicroTec Test Systems (FWB:SMH)(GER:SMH) today announced receipt of purchase orders for test equipment that will enable the development of next-generation integrated circuits (ICs), including CMOS transistor
scaling to the 16-nm node and beyond and the investigation of the reliability characteristics of high-k dielectrics.
In a CMOS transistor
, the CMIS gate insulator layers are made of oxidized silicon.
By raising transistor performance over 50 percent using a conventional planar CMOS transistor
, TI can cost-effectively deliver higher performance products using its installed base of high volume manufacturing equipment.
Increasing carrier mobility in CMOS transistor
is an effective means to obtain better transistor performance.
SAN FRANCISCO -- Reflecting an aggressive program to develop manufacturing solutions for next-generation logic and memory technologies, SEMATECH engineers will present seven technical papers on CMOS transistor
scaling at the prestigious International Electronic Devices Meeting (IEDM) that begins here today.
For example, SiGe or Ge can replace the silicon in MOSFET channels to facilitate CMOS transistor
35um platforms, including high speed SiGe devices, high-density capacitors, resistors, inductors, varactors, and various CMOS transistor
18um platform, including high-density capacitors, resistors, inductors, varactors and various CMOS transistor
TFETs could achieve a 100-fold power reduction over complementary CMOS transistors
, so integrating TFETs with CMOS technology could improve low-power integrated circuits.
Their topics include the ultraviolet engineering of high-k thin films, structural and electrical characteristics of alternative high-k dielectrics for CMOS applications, interfacial dipole effects on high-k gate stacks, high-k dielectrics in ferroelectric gate field effect transistors for nonvolatile memory applications, and the interaction challenges with novel materials in developing high-performance and low-leakage high-k/metal gate CMOS transistors