CMOS transistor


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CMOS transistor

The most widely used integrated circuit (IC) technology. Although the term CMOS "transistor" is widely used, it is somewhat of a misnomer. There is technically no such thing as a single CMOS "transistor." CMOS "gates," CMOS "logic" or CMOS "circuits" are more accurate terms, because CMOS technology is made up of NMOS and PMOS transistors wired in combination to reduce power consumption. See CMOS and MOSFET.
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Toshiba has developed a fabrication process for HfSiON gate dielectric film for 65nm low power CMOS applications and confirmed its characteristic with an experimentally fabricated LSI with 50nm gate-length CMOS transistors.
The aspect ratios of CMOS transistors are listed in Table I.
TFETs could achieve a 100-fold power reduction over complementary CMOS transistors, so integrating TFETs with CMOS technology could improve low-power integrated circuits.
Bias temperature instability is a pressing concern for advanced geometry CMOS transistors, and it results in shifting transistor performance.
Their topics include the ultraviolet engineering of high-k thin films, structural and electrical characteristics of alternative high-k dielectrics for CMOS applications, interfacial dipole effects on high-k gate stacks, high-k dielectrics in ferroelectric gate field effect transistors for nonvolatile memory applications, and the interaction challenges with novel materials in developing high-performance and low-leakage high-k/metal gate CMOS transistors.