Charge Carrier

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charge carrier

[′chärj ‚kar·ē·ər]
(solid-state physics)
A mobile conduction electron or mobile hole in a semiconductor. Also known as carrier.

Carrier, Charge

 

(or simply carrier), a particle or quasi-particle that is capable of carrying an electric charge through a given substance. The term is most frequently used in solid-state physics, where the charge carriers are usually conduction electrons and holes.

References in periodicals archive ?
The defects and impurities can govern the conduction mechanism and also work as trapping centers which get occupied by the injected charge carriers from the (J-V) electrode, hence they become charged and thereby expected to build up a space charge.
In general both forces control the dynamics of all charge carriers.
The surface free charge carriers are responsible for the electrostatic interaction of bacteria with surfaces.
Organic semiconductors differ from more conventional kinds by being held together by van der Waals forces rather than covalent bonds, and so have narrow electronic bandwidths, and charge carriers that are localized and have smaller mobilities.
Analogous to a snow avalanche on a steep mountain slope, an incoming light pulse initially frees just a few charge carriers which in turn free others until the original signal is amplified many times.
Due these orbitals, the charge carriers can move along the PANI molecule.
Other factors responsible for conductivity in bamboo samples being Existence of charge carriers Diffusion of ions Moisture content , etc
A THEORTICAL CALCULATION OF CHARGE CARRIERS IN DOPED SEMICONDUCTORS.
This can be explained by the decrease in the potential barrier height and increase in the efficiency of charge carriers transport through the CIS/polymer interface.
It is our believed that the charge carriers in PKOC are ions in the moisture plus the ions provided by the slightly acidity of the PKOC.
One big difference, however, is how they behave when injected with electrons and holes, collectively referred to as charge carriers.
We also investigate the dependence of forward switching properties on the electro-physical and technological parameters like narrow and wide base widths, electron/hole lifetime, shunt and collector resistances, donor/acceptor concentrations, ambient temperature and capture times of charge carriers recombination.