Czochralski process

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Czochralski process

[chə′kräl·skē ‚präs·əs]
(crystallography)
A method of producing large single crystals by inserting a small seed crystal of germanium, silicon, or other semiconductor material into a crucible filled with similar molten material, then slowly pulling the seed up from the melt while rotating it.
References in periodicals archive ?
The investigations were carried out on single crystals of silicon, designed for use in solar power engineering with application of raw materials of uniform composition and crucibles of a single set according to Czochralski method on commercial installation <<Redmet-30 >>.
Czochralski crystal growth is one of the widely used methods for growing bulk single crystals with high quality and homogeneity from congruent melts with faster growth rates.
Confluence's HiCz[TM] technology is expected to drive down the cost of monocrystalline wafers below traditional Czochralski methods while enabling flexible production of advanced materials used in next generation cell architectures.
Two processes are used internationally to produce these wafers, the standard being the Czochralski method, whereby silicon chunks are melted and a monocrystalline silicon ingot is pulled from the melt by means of a seed crystal.
The application of a strong magnetic field, along with special process control procedures, dampens the melt flow while pulling a silicon ingot out of a silicon melt in a crucible using the so-called magnet-supported Czochralski process (MCZ).
The oxygen stems from the Si-Oxide which is used in the crucible wall of the growing furnace for the so-called Czochralski process.
com/research/e6bc62/crystal_growth_pro) has announced the addition of John Wiley and Sons Ltd's new book "Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone, Shaping and Crucible Techniques" to their offering.
Pall will also display its range of products for the filtration and purification of process gases used in Czochralski (CZ) ingot pullers and in sputtering, thermal deposition and distribution equipment.
After expanding our silicon crystal growing division in both Czochralski (CZ) as well as Bridgman methods across two crystal growing facilities, it was time to bring in a seasoned and well-reasoned materials and management expert to guide us to the next level and next geometries.
The manufacture of Czochralski crucibles for the production of mono-crystalline silicon ingots for the photo-voltaic and semiconductor industries, using NC4A or NC4X High Purity Quartz sand.
In addition, Pall will display its range of products for the filtration and purification of process gases used in Czochralski (CZ) ingot pullers and in sputtering, thermal deposition and distribution equipment.
The typical effect on efficiency from light induced degradation for P-type Czochralski (Cz) silicon solar cells is 0.