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Czochralski process
(redirected from Czochralski method)

   Also found in: Wikipedia 0.01 sec.
Czochralski process [chə′kräl·skē ‚präs·əs]
(crystallography)
A method of producing large single crystals by inserting a small seed crystal of germanium, silicon, or other semiconductor material into a crucible filled with similar molten material, then slowly pulling the seed up from the melt while rotating it.


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In the Czochralski method a LiF seed crystal of known orientation is dipped into molten LiF and slowly drawn out, allowing the melt to crystallize on it.
The much cleaner silicon emerging from this process is ready for the next step, in which specialists use the Czochralski method to grow impressive shiny silver crystals up to two meters tall with a perfect interior structure.
SensArray will optimize an already demonstrated effect in Phase I of the SBIR program by what is known as the Czochralski method.
 
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