Czochralski process


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Czochralski process

[chə′kräl·skē ‚präs·əs]
(crystallography)
A method of producing large single crystals by inserting a small seed crystal of germanium, silicon, or other semiconductor material into a crucible filled with similar molten material, then slowly pulling the seed up from the melt while rotating it.
References in periodicals archive ?
The application of a strong magnetic field, along with special process control procedures, dampens the melt flow while pulling a silicon ingot out of a silicon melt in a crucible using the so-called magnet-supported Czochralski process (MCZ).
The oxygen stems from the Si-Oxide which is used in the crucible wall of the growing furnace for the so-called Czochralski process.
3 Czochralski Process Dynamics and Control Design (Jan Winkler, Michael Neubert, Joachim Rudolph, Ning Duanmu and Michael Gevelber).