Czochralski process

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Czochralski process

[chə′kräl·skē ‚präs·əs]
(crystallography)
A method of producing large single crystals by inserting a small seed crystal of germanium, silicon, or other semiconductor material into a crucible filled with similar molten material, then slowly pulling the seed up from the melt while rotating it.
References in periodicals archive ?
Brixner [5] reported the growth of RE molybdates employing the Czochralski technique at elevated temperatures but the thermal stress introduced during the growth makes the crystal defective.
The Czochralski technique was used to grow singlecrystal lithium fluoride for use as a UV window material.
3] is normally grown using the Czochralski technique, a process that involves immersing a LiNb[O.