Micron's high-quality, high-density NAND and Mobile DRAM MCP devices are currently sampling to select customers and are expected to be available in 1Gb NAND/512Mb Mobile DDR DRAM configurations for production in Q4 2006.
Micron's Mobile DDR DRAM features its innovative new Endur-IC(TM) technology.
This is becoming a universal problem because DDR DRAM
memory is being used in virtually all electronic system designs, from cell phones and set-top boxes, to computers and network routers.
In a separate suit filed today, Rambus named Samsung as a defendant in claims alleging infringement of Rambus patents by Samsung SDRAM and DDR DRAM
memory types as a well as controllers that work with those memory types.
The DDR PHY Interface (DFI) specification, developed by ARM, Denali, Intel, Rambus, Samsung, and Synopsys, defines a common interface between the DDR memory controller logic and the DDR PHY interface in order to reduce cost and expedite time-to-market for DDR DRAM
memory system development.
today announced their co-development of a DDR DRAM
physical interface (DDR PHY)(*1) product compatible with the recently announced DDR-PHY Interface (DFI) version 1.
DIMM memory support for DDR DRAM
module of up to 1GB
As signaling frequencies of mainstream DDR DRAMs
continue to increase, the memory interfaces critical to system performance have become very challenging to design," said Martin Scott, senior vice president of engineering at Rambus Inc.