dopant

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dopant

[′dō·pənt]
(electronics)

dopant

An element diffused into pure silicon in order to alter its electrical characteristics and make it more conductive. Boron, phosphorous, antimony and arsenic are common dopants. See doping.
References in periodicals archive ?
In addition, Honeywell dopants will enable broad adoption of n-type Si substrates instead of currently dominant p-type Si, thus eliminating detrimental effects of light-induced degradation that is inherent to p-type Si.
Today's announcement from the research team reveals the significant influence that the location of individual dopants has on transistor performance.
Previous findings suggest that different dopants and solvents may result in different conformations of doped PANI chains [15].
Lance Armstrong a reconnu sans ambiguite, sans difficulte et en emettant de profonds regrets, avoir remporte sept Tours de France entre 1999 et 2005 grace a l'aide de multiples produits dopants.
Pall will introduce the Gaskleen[R] PG44000 purification system, developed for the removal of moisture, siloxanes and trace metal dopants to sub-ppb levels from bulk silane gas.
Consequently, it offers the possibility of fine tuning the electrical properties of the films because a variety of dopants can be introduced at the oxide formation stage.
A number of papers report the synthesis of polyaniline by using different dopants and its characterization (7, 8).
Forty semiconductor industry laboratories that require accurate measurements of the concentration and distribution of dopant atoms within nanometer-scale devices are field testing a beta version of NIST's new FASTC2D ("fast capacitance to dopant" level) software.
Microchips work properly only if the silicon they're made of is precisely spiced with other atoms known as dopants.
Organization is in sections on UV and white light LEDs; VPE: GaN; dopants and defects; MBE: GaN; electronic devices; InN; nitrade materials for devices; poster sessions on InN, UV LED, electrical transport, nano, visible LED, sensor/detector/electronic devices, contacts/processing; contacts to HEMTs; electrical/transport properties; zinc oxide materials and devices including alloys; visible LED + LD; optical properties; bulk + HVPE; structural; poster sessions on optical properties, dopants/defects, heterostructures, structural, VPE, MBE, HVPE, bulk; nano; and heterostructures: InGaN.
It binds to the silicon surface and keeps the dopants from clumping.
Le furosemide, une substance interdite, est un diuretique utilise pour masquer d'autres produits dopants.