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Matthiessen's rule |
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Matthiessen's rule An empirical rule which states that the total resistivity of a crystalline metallic specimen is the sum of the resistivity due to thermal agitation of the metal ions of the lattice and the resistivity due to the presence of imperfections in the crystal. This rule is a basis for understanding the resistivity behavior of metals and alloys at low temperatures. The resistivity of a metal results from the scattering of conduction electrons. Lattice vibrations scatter electrons because the vibrations distort the crystal. Imperfections such as impurity atoms, interstitials, dislocations, and grain boundaries scatter conduction electrons because in their immediate vicinity the electrostatic potential differs from that of the perfect crystal. How to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit webmaster's page for free fun content. |
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| This transistor has an etched surface flatness of less than 1 nm in irregularity, and has high electron mobility. The power FETs adopts a High Electron Mobility Transistor (HEMT) structure. Strained silicon technology provides high electron mobility by stretching the top silicon layer with an underlying layer of silicon germanium (SiGe). |
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