Erasable Programmable Read-Only Memory


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erasable programmable read-only memory

[i¦rās·ə·bəl prō¦gram·ə·bəl ¦rēd ‚ōn·lē ′mem·rē]
(computer science)
A read-only memory in which stored data can be erased by ultraviolet light or other means and reprogrammed bit by bit with appropriate voltage pulses. Abbreviated EPROM.

Erasable Programmable Read-Only Memory

(storage)
(EPROM) A type of storage device in which the data is determined by electrical charge stored in an isolated ("floating") MOS transistor gate. The isolation is good enough to retain the charge almost indefinitely (more than ten years) without an external power supply. The EPROM is programmed by "injecting" charge into the floating gate, using a technique based on the tunnel effect. This requires higher voltage than in normal operation (usually 12V - 25V). The floating gate can be discharged by applying ultraviolet light to the chip's surface through a quartz window in the package, erasing the memory contents and allowing the chip to be reprogrammed.
References in periodicals archive ?
Electrically Erasable Programmable Read-Only Memory (EEPROM): EEPROM is a non volatile storage chip used to store small amounts of data.
Electrically Erasable Programmable Read-only Memory (EEPROM), similar to flash memory, is a variation of Non-Volatile Memory (NVM).
Since the establishment of the ARMS foundry in 1999, JMAR has played a key role in the installation and implementation of that foundry's chip fabrication processes, which include Complementary Metal-oxide Semiconductor (CMOS) gate array, Electronically Erasable Programmable Read-only Memory (EEPROM), and radiation tolerant ultra-thin silicon technologies.
The Electronically Erasable Programmable Read-Only Memory (EEPROM) process to be installed by JSI was previously operated at Raytheon Co.