FeRAM

(FerroelectricRAM) A non-volatile, random access memory technology that uses a ferroelectric capacitor to store a binary state (0 or 1) as two voltages. It uses one or two transistors to read and write the capacitor. FeRAM was designed to replace flash memory because it writes considerably faster, uses less power and is byte addressable. It has virtually unlimited write cycles, making it superior to flash in applications that require constant updating. FeRAM can also be more easily integrated with other circuits on a semiconductor chip. In addition, FeRAM can be used to replace SRAM chips.

Ramtron International, Colorado Springs, CO (www.ramtron.com) was the first to produce a commercial FeRAM chip in 1992. Ramtron's Ferroelectric RAM (FRAM) technology is also licensed to other companies. See ferroelectric capacitor.