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field emission
(redirected from Fowler-Nordheim tunneling)

   Also found in: Wikipedia 0.02 sec.
field emission [′fēld ə‚mish·ən]
(electronics)
The emission of electrons from the surface of a metallic conductor into a vacuum (or into an insulator) under influence of a strong electric field; electrons penetrate through the surface potential barrier by virtue of the quantum-mechanical tunnel effect. Also known as cold emission.

Field emission

The emission of electrons from a metal or semiconductor into vacuum (or a dielectric) under the influence of a strong electric field. In field emission, electrons tunnel through a potential barrier, rather than escaping over it as in thermionic or photoemission. The effect is purely quantum-mechanical, with no classical analog. It occurs because the wave function of an electron does not vanish at the classical turning point, but decays exponentially into the barrier (where the electron's total energy is less than the potential energy). Thus there is a finite probability that the electron will be found on the outside of the barrier. See Photoemission, Quantum mechanics, Thermionic emission

For a metal at low temperature, the process can be understood in terms of the illustration. The metal can be considered a potential box, filled with electrons to the Fermi level, which lies below the vacuum level by several electronvolts. The distance from Fermi to vacuum level is called the work function, &phgr;. The vacuum level represents the potential energy of an electron at rest outside the metal, in the absence of an external field. In the presence of a strong field, the potential outside the metal will be deformed along the line AB, so that a triangular barrier is formed, through which electrons can tunnel. Most of the emission will occur from the vicinity of the Fermi level where the barrier is thinnest. See Electron emission

Diagram of the energy-level scheme for field emission from a metal at absolute zero temperatureenlarge picture
Diagram of the energy-level scheme for field emission from a metal at absolute zero temperature


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FGA(TM) technology is an extension of an existing Xicor proprietary nonvolatile technology that capitalizes on the extraordinary capabilities of thick oxide Fowler-Nordheim Tunneling devices to retain a precision charge level on floating gate devices.
Central to its core intellectual properties are several fundamental flash memory patents covering the memory cell architecture and operations in the Fowler-Nordheim tunneling mode.
 
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