gallium arsenide

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Related to GaAs: AlGaAs

gallium arsenide

[′gal·ē·əm ′ärs·ən‚īd]
(inorganic chemistry)
GaAs A crystalline material, melting point 1238°C; frequently alloys of this material are formed with gallium phosphide or indium arsenide.

gallium arsenide

An alloy of gallium and arsenic compound (GaAs) that is used as the base material for chips. Several times faster than silicon, it is used in high frequency applications such as cellphones, DVD players and fiber optics. In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost. See gallium nitride.
References in periodicals archive ?
On 22 December 2015, while the company's board was considering the proposed GaAs Labs amendment, the company received a proposed amendment to the competing bidder's merger agreement that increases the per-share offer price to USD 0.
The Strategy Analytics forecast segments the SI GaAs epitaxial substrate market by diameter, geography, epitaxial processing technique, application and supplier.
Codification of Statements on Auditing Standards (# 057194JA) provides GAAS standards applicable to nonissuers.
3) All GaAs companies would go out of business if their wafers cost $10,000 each.
Ion implantation of n-type impurities into semi-insulating GaAs is used to fabricate depletion-mode and enhancement-mode GaAs JFETs and MESFETs.
The book starts by introducing the reader to the physics of GaAs devices by defining concepts of valence bands, light and heavy holes, energy states and densities, and energy separation.
The Strategy Analytics forecast segments the GaAs device market by application, device type, process, geography and frequency.
Private-company requests for PCAOB audits give you an opportunity to educate clients about GAAS and PCAOB standards and the requirements of each.
A custom GaAs IC is well suited for signal distribution to multiple ports as it eliminates the need for large directional couplers and lowers the power-handling requirements on the output FET.
The procedures we perform under GAAS do not provide sufficient evidence to enable us to express an opinion or any other assurance relative to the internal control structure's design or effectiveness.
These procedures go beyond those required to comply with GAAS and are imposed by law, regulation or contractual agreement.
com/research/7hqmtf/global_gaas_device) has announced the addition of the "Global GaAs Device Market 2011-2015" report to their offering.