GaAs FET

GaAs FET

[′gas‚fet]
References in periodicals archive ?
Samples of the Toshiba high gain GaAs FET family are available now.
The result is a GaN power FET with eight times the power density of a GaAs FET and the world's highest output power at the 6GHz frequency level.
To enhance the product line for the global market, the company has developed MGFC47B3538B, an internally impedance matched high output power GaAs FET for the Central and Eastern European markets with lower distortion at low electric current, and Mitsubishi Electric will continue expansion of its power amplifier business for WiMAX base transceiver stations.
Samples of the Toshiba Power Added Efficiency GaAS FET family are available now.
With IEEE establishing a global standard system specification, we have developed 3 new GaAs FET internally impedance matched high output power devices, and started promotion of the WiMAX base transceiver station business.
The result is a GaN power FET with six times the power density of a GaAs FET and the world's highest output power at the 9.
Unparalleled signal performance - the GaAs FET RF front end with multi-stage surface-acoustic-wave (SAW) filters has an unmatched combination of overload immunity and sensitivity.
Toshiba has a broad power GaAs FET product family to support extended C-band, but many customers have asked us to upgrade the family using the latest process technology.
A new X-Band GaAs FET for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, the TIM1011-8ULA, operates in the 10.
The MPS-032701A-82 is a fully matched GaAs FET amplifier in a ceramic surface mount package.
Unparalleled signal performance -- the GaAs FET RF front end with multi-stage surface-acoustic-wave (SAW) filters has an unmatched combination of overload immunity and sensitivity.