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GaAs FET |
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No references found | The result is a GaN power FET with eight times the power density of a GaAs FET and the world's highest output power at the 6GHz frequency level. To enhance the product line for the global market, the company has developed MGFC47B3538B, an internally impedance matched high output power GaAs FET for the Central and Eastern European markets with lower distortion at low electric current, and Mitsubishi Electric will continue expansion of its power amplifier business for WiMAX base transceiver stations. With IEEE establishing a global standard system specification, we have developed 3 new GaAs FET internally impedance matched high output power devices, and started promotion of the WiMAX base transceiver station business. |
GaAs FET |
GAAHK GAAHPN GAAIFL GAAJ Gaal GaAlAs GAALN GaAlP GAALT GAAM GAAMC GAAMP GAAN GAANN GAANZ GAAO GAAP GAAP GAAP GAAP GAAQG GAAR GAARC GAARP GAARS GAART GaAs GaAs GaAs GaAs GaAs FET GAASAGAASD Gääser Dorfverein GaAsFET Gaash GaAsP GAAT GAATA GAATES GAATN GAATOR GAATS GAATV GAATW GAAv GAAY GAAZ gab gab gab gab gab gab GABA GABA GABA GABA Gaba agents Gaba agents Gaba agents | |||||||
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