grown-junction transistor

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grown-junction transistor

[¦grōn ¦jəŋk·shən tran′zis·tər]
(electronics)
A junction transistor in which different impurities are placed in the melt in sequence as the silicon or germanium seed crystal is slowly withdrawn, to produce the alternate pn and np junctions.
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The earliest practical form was the grown junction transistor in 1950, which was followed in 1952 by the alloy junction transistor, the diffused-base transistor (1955), and the epitaxial transistor (1960).