Gunn Diode


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Related to Gunn Diode: Tunnel diode, PIN diode, IMPATT diode

Gunn diode

[′gən ¦dī‚ōd]
(electronics)

Gunn Diode

 

a semiconductor device whose operation is based on the Gunn effect.

The basic element of the Gunn diode is a semiconductor crystal made of gallium arsenide, indium phosphide, or the like, from one to hundreds of microns thick and joined to two ohmic contacts. The crystal’s specific resistance is from ~0.001 to ~0.01 ohm·m. The Gunn effect arises when the critical field intensity (approximately 300 kilovolts per meter for gallium arsenide) is reached. Gallium arsenide is used in the manufacture of industrial Gunn diodes. The diodes are used for amplification and generation of electric oscillations, with a power on the order of several kilowatts (under impulse operating conditions) or hundreds of milliwatts (under constant-current operating conditions) at frequencies from ~0.1 to ~100 million kilocycles; they are used also in making the fast-acting logical and functional elements of electronic devices.

References in periodicals archive ?
Another consideration is that it is easy to introduce a second microwave diode with a Gunn diode when both are used as naked semiconductor die.
This Gunn Diode is designed for both CW and pulsed mode K-band frequency source applications.
Harvey has a long history of system design for telecommunications, and for the last eight years has participated in the evolution of millimeter radios from Gunn diode or multiplier-based FSK technology, through GaAs pHEMT MMIC-based linear radios.
Gunn diodes are produced for mm-wave applications in large volumes, such as in radio links and door openers, and the technology is fairly mature today.
Using a lower frequency FET oscillator and tripler eliminate the need for the more expensive, less reliable Gunn diode fundamental oscillator.
For this purpose, the Gunn diode and tuner's rotor are taken to be a single metal rod that has a diameter equal to the diameter of the center hole of the dielectric resonator.
Lowbridge, "High Power, High Stability, mm-Wave Gunn Diode Oscillators Using Graded Gap Transfer Electron Devices," MIOP Conference, 1990.
To demonstrate this technology for mm-wavelengths, a 37 GHz active notch antenna was built using a Gunn diode on a 0.
The Japanese investigators[12,13] describe coherent power combining and frequency-locking at X-band of 18 Gunn diodes (6 X 3 grid) or six GaAs MESFETs (3 X 2 grid).
However, the Gunn diode is not easily incorporated into a FET MMIC process, due to its incompatible vertical structure.
In the configuration of the first active patch antenna, [4] a Gunn diode was imbedded in a rectangular microstrip patch antenna.
The 46 to 64 GHz lumped-element Gunn VCO that was downconverted was varactor tuned at fundamental frequency, and output was obtained from the in-situ generated second harmonic frequency of the Gunn diode.