Objective: "The proposed HARFIR project intends to develop antiferromagnetic (AF) Heusler alloy
(HA) films to replace the antiferromagnetic alloy Iridium Manganese (IrMn), which has been widely used in all spin electronic devices including hard disk drives and next-generation magnetic memories.
The next class of materials that were investigated were the Heusler alloy
series R [Pd.
Structural and Magnetic Properties of Off-Stochiometric Ni-Mn-Al Heusler Alloy
Balancing theory and experiment, 12 invited, peer-reviewed papers explore the materials from such perspectives as combing magnetism and ferroelectricity towards multiferroicity, intrinsic free electrons/holes at polarization discontinuities and their implications for the basics of ferroelectricity and its origin, molecular spintronics, recent applications of Landau-Ginzburg theory to ferroelectric superlattices, ferromagnetic shape memory Heusler alloys
, and dielectric relaxation phenomena in some lead and non-lead based ferroelectric relaxor materials.
Subjects include sample preparation for experimentation, thermal treatments and phase stability, magnetic and structural characterization, alloys suitable for applications at the micro scale, resistance and magnetocaloric effects, with papers covering physical phenomena in magnetic shape memory science, main patterns in NiMnGa films, ferromagnetic materials in silicon wafers, transformations in NiMnGa alloys, acoustic energy absorption, shape memory alloys in polymer composites, hybridization effects, and properties of Heusler alloys
They are structurally comparable to their parent compounds, the Heusler alloys