insulated-gate bipolar transistor (redirected from Insulated gate bipolar transistor)

insulated-gate bipolar transistor [¦in·sə‚lād·əd‚gāt bī‚pō·lər tran′zis·tər]

(electronics)

A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of ap-type region and ann-type region, but differs from the MOSFET in the use of ap+ substrate layer (in the case of ann-channel device) for the drain. The effect is to change the transistor into a bipolar device, as thisp-type region injects holes into then-type drift region. Abbreviated IGBT.