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insulated-gate bipolar transistor

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insulated-gate bipolar transistor [¦in·sə‚lād·əd‚gāt bī‚pō·lər tran′zis·tər]
(electronics)
A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of ap-type region and ann-type region, but differs from the MOSFET in the use of ap+ substrate layer (in the case of ann-channel device) for the drain. The effect is to change the transistor into a bipolar device, as thisp-type region injects holes into then-type drift region. Abbreviated IGBT.
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They have retained the basic physics of classic devices and added material on such areas of contemporary interest as three-dimensional MOSFETs (metal-oxide-semiconductor field-effect transistors), nonvolatile memory, modulation-doped field effect transistor, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor, quantum cascade laser, and semiconductor sensors.
Physics of semiconductor devices, 3d ed by SciTech Book News
Continuous improvements in some types of semiconductors such as insulated-gate bipolar transistors (IGBTs) and metal-oxide semiconductor field effect transistors (MOSFETs) are also stimulating the market.
Tough Times for Discrete Power Semiconductor Manufacturers as Profits ... by Business Wire
4-amp-output half-bridge gate drive optocoupler designed specifically for low-power (up to 25A) motor-control-inverter applications, such as air conditioners and washing machines using inverters based on insulated-gate bipolar transistor (IGBTs).
HP Introduces Low-Cost, SO-16, Half-bridge Gate Drive Optocoupler for ... by Business Wire
 
 
 
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