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insulated-gate bipolar transistor |
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insulated-gate bipolar transistor [¦in·sə‚lād·əd‚gāt bī‚pō·lər tran′zis·tər] (electronics) A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of ap-type region and ann-type region, but differs from the MOSFET in the use of ap+ substrate layer (in the case of ann-channel device) for the drain. The effect is to change the transistor into a bipolar device, as thisp-type region injects holes into then-type drift region. Abbreviated IGBT. How to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit webmaster's page for free fun content. |
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They have retained the basic physics of classic devices and added material on such areas of contemporary interest as three-dimensional MOSFETs (metal-oxide-semiconductor field-effect transistors), nonvolatile memory, modulation-doped field effect transistor, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor, quantum cascade laser, and semiconductor sensors. The HCPL-314J optocoupler is an excellent alternative to high-voltage integrated circuits (HVICs) and provides a low-cost way to drive an insulated-gate bipolar transistor (IGBT). |
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