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Ion implantation
(redirected from Ion implanter)

   Also found in: Wikipedia 0.07 sec.
Ion implantation

A process that utilizes accelerated ions to penetrate a solid surface. The implanted ions can be used to modify the surface composition, structure, or property of the solid material. This surface modification depends on the ion species, energy, and flux. The penetration depth can be controlled by adjusting the ion energy and the type of ions used. The total number of ions incorporated into the solid is determined by the ion flux and the duration of implantation. This technique allows for the precise placement of ions in a solid at low temperatures. It is used for many applications such as modifying the electrical properties of semiconductors and improving the mechanical or chemical properties of alloys, metals, and dielectrics. See Alloy, Dielectric materials, Metal, Semiconductor

Wide ranges of ion energy and dose are applied. For ion energy ranging from 1 keV to 10 MeV, the ion penetration depth varies from 10 nanometers to 50 micrometers. In general, it is difficult to get deeper penetration since extremely high energy ions are required. As such, ion implantation is a surface modification technique and not suitable for changing the entire bulk property of a solid. Ion dosage also varies depending on the applications. Doses ranging from 1010 to 1018 ions/cm2 are typically applied. For high-dose applications, ion sources providing high ion currents are needed to keep the implantation time reasonable for production purposes.

Ion implantation is used extensively in the semiconductor industry. The fabrication of integrated circuits in silicon often requires many steps of ion implantation with different ion species and energies. The implanted ions serve as dopants in semiconductors, changing their conductivity by more than a factor of 108. See Integrated circuits

Ion implantation is also used to change the surface properties of metals and alloys. It has been applied successfully to improve wear resistance, fatigue life, corrosion protection, and chemical resistance of different materials. Even though the ion projected range is less than 1 μm, surface treatment by ion implantation can extend the lives of metal or ceramic tools by 80 times or more. Ion implantation can form new compounds such as nitrides on the surface, and the implanted ions can be found at much greater depths than the projected range due to diffusion or mechanical mixing. See Ceramics



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The VIISta P2LAD ultra low energy ion implanter combines pulsed-plasma doping with the VIISta platform functionality to overcome the significant technical challenges presented by the requirements of low energy doping for ultra shallow junctions.
The Company has received the first purchase order to perform the initial phase of the contract which provides for the modification of an existing ion implanter that should enable the ion implantation of the customer's specialty substrate.
NASDAQ: ACLS) has received a follow-on order for its Optima HD high dose ion implanter from one of the world's largest manufacturers of memory devices.
 
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