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Junction FET |
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Siliconix pioneered the development of vertical trench power MOSFETs to overcome the limitations of planar DMOS devices, where a parasitic junction FET effect places a severe limit on the benefit of increasing transistor cell densities. Siliconix pioneered the development of vertical trench power MOSFETs to overcome the limitations of planar DMOS devices, where a parasitic junction FET effect places a severe limit on the benefit of increasing transistor cell densities. |
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Junction FET