and the Center for Advanced Vehicle Systems (CAVS) at Mississippi State University announced today that SemiSouth's enhancement-mode silicon carbide (SiC) Junction Field Effect Transistor
(JFET) significantly improved the efficiency of an off-the-shelf inverter commonly used in residential and commercial solar power energy systems.
The two new patent awards, 7,294,860 - "Monolithic Vertical Junction Field Effect Transistor
& Schottky Barrier Diode Fabricated From Silicon Carbide & Method of Fabricating the Same" and 7,274,083 - "Semiconductor Device w/ Surge Current Protection & Method of Making" cover key power management topics such as integration of SiC JFET, diodes, circuits, and process designs for SiC power JFETs.
Among his topics are material properties, ideal specific on-resistance, junction field effect transistors
, silicon carbide planar power metal-oxide-semiconductor field-effect-transistors, silicon carbide bipolar junction transistors, and silicon carbide gate turn-off thyristors.