In a field-effect MOS transistor
containing one semiconductor crystal (substrate), the current flows from the source electrode deposited on the highly doped region of the n-conductivity semiconductor crystal substrate to the drain electrode deposited on the heavily doped region of the semiconductor substrate with p-conductivity, through a channel located under the gate electrode.
Mandal, "An improvised MOS transistor
model suitable for geometric program based analog circuit sizing in submicron technology", VLSID, 2010.
O'Reilly, "Simulation-based Reusable posynomial models for MOS transistor
parameters", DATE, 2007.
Switching response of complementary symmetry MOS transistor
logic circuits," RCA Rev.
Developed with DENSO's own technology, the new SJ MOS transistor
can be used to increase the energy efficiency of personal computer AC adapters, servers, in-vehicle power converters, and other devices, while also making them smaller in size.
Another wideband bulk-injection mixer has been designed with a four-terminal MOS transistor
They use an accurate but simple MOS transistor
model for design, in order to reduce the distance between hand design and simulation results.
His 1974 paper on MOS transistor
scaling is universally referenced and has been reprinted as a 'Classic Paper' in the Proceedings of the IEEE.
A standard n-channel MOS transistor
is thus converted into a non-volatile memory cell.
Tokyo, Japan, Jan 17, 2006 - (JCN) - The National Institute for Advanced Industrial Science and Technology (AIST) and Tohoku University announced the manufacture of a high-performance upright-type double gate MOS transistor
capable of ultra-large scale integration using neutral beams which cannot damage silicon substrates.
This article presents an n-channel MOS transistor
model for the simulation of CMOS RF circuits in the gigahertz range.
So indeed, MOS transistor
scaling has served us well by providing continued improvements in density, performance, and power.