magnetic random access memory


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magnetic random access memory

[mag¦ned·ik ‚ran·dəm ′ak‚ses ‚mem·rē]
(computer science)
A nonvolatile memory in which submicrometer-sized magnetic structures store digital information in their magnetic orientation. Abbreviated MRAM.
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and Singapore's A*STAR Data Storage Institute (DSI) jointly announced today that the two companies have entered into an agreement to collaborate on the development of spin transfer torque magnetic random access memory (STT-MRAM), a promising alternative non-volatile memory technology for next-generation storage.
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) Device With Shared Transistor And Minimal Written Data Disturbance" (USPTO #8,611,145) - fundamental method to enable STT-MRAM functionality at extreme data densities where MTJ cell writability is significantly enhanced by acquiring writing power from adjacent unused MTJ cells.
The two companies will collaborate in the commercial development of Magnetic Random Access Memory (MRAM), which uses a magnetic charge, not the normal electronic charge, to store data.
NIST staff have explored the use of rare-earth dopants to control the high-speed dynamics in magnetic thin films used in magnetic recording heads and magnetic random access memory (MRAM).
Crocus Technology, a premier developer of Magnetic Random Access Memory (MRAM), continues to expand the reach of its IP coverage by today announcing two new patent grants by the US Patent and Trademark Office and the French Institut National de la Propriete Industrielle (INPI).
a developer of disruptive memory technology and enterprise solid state storage solutions, today announced it has been awarded key 'milestone' patents for its non-volatile spin torque transfer magnetic random access memory (STT-MRAM) technology and solid-state storage array system design.
Such quantum-mechanical junctions are the foundation of a fledgling memory technology called magnetic random access memory, or MRAM.
Crocus Technologies, a premier developer of Magnetic Random Access Memory (MRAM) products and technology, today announced that Ken Hines has joined its team as Vice President of Business Development.
SUNNYVALE, California and MIGDAL HA'EMEK, Israel, June 18 /PRNewswire-FirstCall/ -- Crocus Technology, a premier developer of Magnetic Random Access Memory (MRAM) and Tower Semiconductor, Ltd.