ferromagnetic RAM

(redirected from Magnetoresistive Random Access Memory)
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ferromagnetic RAM

A random access memory that uses ferromagnetic materials. See MRAM.
References in periodicals archive ?
MagSil Corporation, a privately-held venture funded company, is developing a Magnetoresistive Random Access Memory (MRAM) technology that leverages advanced magnetic technology and standard Silicon-based semiconductor technology.
NUREMBERG, Germany -- Freescale Semiconductor, the leading provider of magnetoresistive random access memory (MRAM) products, is providing MRAM non-volatile memory technology for environmentally harsh applications, such as military, aerospace, industrial and automotive systems.
AUSTIN, Texas -- Freescale Semiconductor will showcase magnetoresistive random access memory (MRAM) and micro-electro-mechanical systems (MEMS) technology innovations and discuss key issues around semiconductor outsourcing during sessions at SEMICON West 2007.
AUSTIN, Texas -- Freescale Semiconductor, a global leader in the design and manufacture of embedded semiconductors, has expanded its award-winning magnetoresistive random access memory (MRAM) family with the world's first 3-volt 4Mbit extended temperature range (-40 to +105[deg]C) non-volatile RAM (nvRAM) product.
New York University researchers have developed a new form of magnetoresistive random access memory (MRAM), which will provide non-volatile storage of frequently updated, critical data, and instant-on convenience.
MR2A16A Advanced Magnetoresistive Random Access Memory Continues to Receive Industry Accolades
Keywords for this press release: System-On-Chip, SoC, embedded, memory, scalability, eSRAM, eDRAM, eFlash, Ferroelectric, FRAM, FeRAM, Magnetoresistive Random Access Memory, MRAM, phase change memory, ovonic unified memory, PRAM, PCRAM, OUM, carbon nanotube memory, molecular memory, nanocrystal memory, zero capacitor memory, polymer memory, Twin Transistor Random Access Memory, TTRAM, biomolecular memory