MOSFET

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MOSFET

[′mȯs‚fet]

MOSFET

MOSFET

(Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged discrete components for high power applications as well as by the hundreds of millions inside a single chip (IC).

The "MO" and "FE"
The "metal oxide" (MO) in MOS comes from the first devices that used a metal gate over oxide (silicon dioxide). Subsequently, poly-crystalline silicon was used for the gate, but MOS was never renamed. The "field-effect" (FE) in FET is the electromagnetic field that is generated when the gate electrode is energized, causing the transistor to turn on or off.

NMOS and PMOS
In NMOS transistors, the silicon channel between the source and drain is of p-type silicon. When a positive voltage is placed on the gate electrode, it repulses the holes in the p-type material forming a conducting (pseudo n-type) channel and turning the transistor on. A negative voltage turns the transistor off. With a PMOS transistor, the opposite occurs. A positive voltage on the gate turns the transistor off, and a negative voltage turns it on. NMOS transistors switch faster than PMOS.

CMOS
When an NMOS and PMOS transistor are wired together in a complementary fashion, they become a CMOS (complementary MOS) gate, which causes no power to be used until the transistors switch. CMOS is the most widely used microelectronic design process and is found in almost every electronic product. See power MOSFET, n-type silicon, bipolar transistor, chip and FET.


MOSFETs in a Chip
Note the channel underneath the gate electrode. When voltage is applied to the gate, it creates a "field" with the opposite charge.


MOSFETs in a Chip
Note the channel underneath the gate electrode. When voltage is applied to the gate, it creates a "field" with the opposite charge.
References in periodicals archive ?
The report considers the sales of the entire range of high-voltage MOSFETs which have voltage ratings of 201 and above.
Super junction MOSFETs are power semiconductor components used for high-frequency and high-voltage applications.
Key Market Trend -- Increasing Demand for Low-voltage MOSFETs.
com/research/tt6pj4/super_junction) has announced the addition of the "Super Junction MOSFET Business Update 2013" report to their offering.
PHOENIX -- ON Semiconductor (Nasdaq: ONNN), a global leader in power management semiconductor solutions, today introduced a new generation of power MOSFETs offered in tiny SOT-723 packages and optimized for space-constrained portable applications.
The dual heat-dissipation paths provided by PolarPAK's double-sided cooling construction allow high current densities in systems with forced air cooling, enabling more compact designs and/or the ability to reduce the number of paralleled MOSFETs.
These IXYS MOSFETs provide for very low conduction and switching losses, and are avalanche rated for hard-switching applications.
As a space-saving alternative to MOSFETs in the much larger SO-8 package, the new PowerPAK ChipFET devices deliver higher power density by offering the same 3-W maximum power dissipation with an 81 % smaller footprint area and a 48 % thinner height profile (0.
35 acents Applications for Super Junction MOSFETs p.
International Rectifier, IR([R]) (NYSE:IRF), a world leader in power management technology, today introduced the IRF6643PbF, a 150V DirectFET([R]) MOSFET for isolated DC-DC converters operating from a wide range, 36V to 75V universal telecommunications input and 48V fixed input systems.
A Web-based tool that gives designers a detailed simulation of how Vishay Siliconix MOSFETs will perform thermally and be affected by adjacent components in a wide range of applications is now available on the Web site of Vishay Intertechnology, Inc.