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phase change memory |
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A non-volatile, random access memory technology that is designed to initially replace flash memory and, potentially, DRAM memory. It employs the same phase change principle used in rewritable optical discs (CD-RWs, DVD-RWs, etc.). Also called "phase change RAM" (PRAM and PCRAM), chalcogenide RAM (C-RAM) and Ovonyx Unified Memory (OUM), Ovonyx, Inc., Rochester Hills, MI (www.ovonyx.com) is the pioneer in this field with patents that date back to the 1960s. Via licensing agreements with Ovonyx, Samsung introduced a prototype and BAE Systems introduced its C-RAM chip in 2006. How to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit webmaster's page for free fun content. |
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Hynix') today announced that they have entered into a long-term license agreement for memory products under Ovonyx' patents and intellectual property relating to Phase Change Memory (PCM) technology. We also present information on research into shrinking the flash die size and creating newer architectures such as Phase Change Memory and 3D Memory. We also present information on research into shrinking the flash die size and creating newer architectures such as Phase Change Memory and 3D Memory. |
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