photoresist


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Related to photoresist: photolithography

photoresist

[′fōd·ō·ri‚zist]
(graphic arts)
A light-sensitive coating that is applied to a substrate or board, exposed, and developed prior to chemical etching; the exposed areas serve as a mask for selective etching.

Photoresist

 

a photosensitive polymer coating applied to the surface of a semiconductor plate with an oxide film. Photoresists are used in semiconductor electronics and microelectronics to produce areas of a specific configuration that permit access of an etching agent onto the plate.

The properties of a photoresist are altered on exposure to ultraviolet light or an electron beam through a glass template of the required configuration applied to the photoresist. Either the solubility of the photoresist is sharply reduced (in the case of a negative photoresist), or the photoresist is decomposed and may be easily removed (in the case of a positive photoresist). Subsequent treatment with a solvent forms the access areas in the nonirradiated segments of a negative photoresist or in the irradiated segments of a positive photoresist. Negative photoresists consist of layers of polyvinyl alcohol with chromates or cinnamic acid esters and layers of cyclized rubber with additives that produce crosslinking of the macromolecules under the action of light. Positive photoresists consist of a phenol-formaldehyde or cresol-formal-dehyde resin with ortho-naphthoquinone diazide.

REFERENCES

Fotolitografiia i optika. Moscow-Berlin, 1974.
Mazel’, E. Z., and F. P. Press. Planarnaia tekhnologiia kremnievykh priborov. Moscow, 1974.

photoresist

A film used in photolithography that temporarily holds the pattern of a circuit path or microscopic element of a chip. When exposed to light, it hardens and is resistant to the acid bath that washes away the unexposed areas. Not to be confused with photoresistor.
References in periodicals archive ?
Polymer based chemically amplified photoresists have historically been used with great success but are limited in the EUV range.
Although the behavior of photoresist in spin coating is complicated due to the microstruetures, major process parameters can be inferred from the principle of spin coating on a flat wafer.
Once the reacted portion of the polymer is removed, the remaining photoresist serves as a mask for patterning the circuits on to the wafer.
2004) the pressure difference between both sides of a photoresist line caused by capillary forces can be quantified by the Laplace equation of capillarity assuming the meniscus is shaped as a section of a cylinder between two infinite lines:
Where less UV light penetrates the photomask, there's less breakdown of the photosensitive coatings, called photoresists, that cover chips during processing.
According to Craig Taylor, the principal investigator on a new photoresist removal technology at Los Alamos National Laboratory, the industry currently uses one of three general categories of photoresist removal technologies: aqueous-based acidic or alkaline solutions, nonaqueous organic solvents (usually containing some fraction of halogenated or polycyclic aromatic hydrocarbons), or radio-frequency plasmas of reactive species such as oxygen or fluorine.
In addition to our collaborative history, GaSonics' global market leadership in photoresist removal and its commitment to next-generation process solutions were key criteria in our purchasing decision.
Additional chemicals etch away the glass underneath that is not protected by the photoresist.
We are continuing to see strong growth in Asia, especially for photoresists and related materials," said Sam Shoemaker, global general manager for Dow Electronic Materials' Semiconductor Technologies business.
has recently developed a solution to these problems--a sensor that has the sensitivity to detect the residual contamination level of every wafer that had been exposed to photoresist.
After forming the tiny metal components and dissoving away the rest of the photoresist polymer, they then freed the components from the base by dissolving the sacrificial layer.
Another reason seems to be that even those who are aware of the problem remain unsure about the impact that low photoresist amounts are having on their yields.