RS flip-flop

RS flip-flop

References in periodicals archive ?
There are two categories of CMOS RS flip-flops in the simulation, CMOS RS flip-flop composed of two cross-coupled NOR gates and two cross-coupled NAND gates.
Effects of microwave electromagnetic interference on CMOS RS flip-flops need to be studied.
In this paper, device simulation studies on the effects of CMOS RS flip-flops under microwave electromagnetic interference are presented.
Effects of microwave electromagnetic interference on CMOS RS flip-flops are studied by varying parameters of microwave electromagnetic interference pulse.
The validity of SDS is verified using commercial software MEDICI [15] before investigating the effects on CMOS RS flip-flops.
This section discusses the effects of microwave electromagnetic interference on CMOS RS flip-flops from the aspects of frequency and pulse width by examining the input/output characteristics and the behaviors of carriers in MOS devices.
In the meantime, the fluctuation of outputs goes smaller, which implies that the effects of microwave electromagnetic interference get suppressed at higher frequency and the susceptibility of CMOS RS flip-flops to microwave electromagnetic interference is inversely proportional to the frequency.
We consider the schematics of CMOS RS flip-flops as shown in Figure 1 to analyze the simulated results.
This is in accordance with the previous analysis and demonstrates that the susceptibility of CMOS RS flip-flops to microwave electromagnetic interference is inversely proportional to the frequency from the perspective of behaviors of carriers in MOS devices.
Simulated results of susceptibility of two categories of CMOS RS flip-flops to microwave electromagnetic interference have been reported.
by replacing an RS flip-flop with a T flip-flop we can get an ring reservation;