silicon germanium

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silicon germanium

(SiGe) A semiconductor material made from silicon and germanium. Germanium is very similar to silicon, but when one layer is grown on top of the other to form the base of the transistor, the resulting transistor can switch faster and yield higher performance.

SiGe transistors are compatible with standard fabrication processes and are built on the same chip with silicon transistors to create high-frequency circuits. Only a handful of SiGe transistors are used in mobile phones, while tens of thousands are used in optical switches, DACs and ADCs. See silicon and strained silicon.
References in periodicals archive ?
The problem with the SiGe under the GaAsP layer is that SiGe absorbs the lower-energy light waves before it reaches the bottom silicon layer, and SiGe does not convert these low-energy light waves into current.
Despite an increased likelihood of allergy development with increasing sIgE shown for cow's milk, egg[s], and peanut[s], our data do not support the use of sIgE testing for the diagnosis of food allergy in subjects without a history of reaction to that food," the authors concluded.
As Tektronix's lab demonstration makes very apparent, IBM's 8HP SiGe technology continues to deliver a winning combination of speed, accuracy and integration required for high-end instrumentation," said Regina Darmoni, Director, Specialty Foundry, IBM.
13um SiGe technology to our Migdal Haemek fab and the addition of a copper back-end.
By 2000, Tektronix announced the delivery of the TDS7000 Series real-time oscilloscopes, the fastest commercially available oscilloscopes at the time, powered by IBM's flagship SiGe 5HP technology.
A spokesperson for SiGe said that its new WiMAX transceiver leverages SiGe's RF design and process technology expertise to offer an optimised solution relative to overall performance and flexibility.
SiGe Semiconductor has introduced the RangeCharger[TM] SE2522BL power amplifier, which delivers a combination of high output power and power control features to improve transmission range and efficiency of wireless access devices compliant to the IEEE 802.
SiGe Semiconductor announced that it has signed an agreement with IBM under which SiGe Semiconductor will be granted assignments and licenses to intellectual property associated with IBM power amplifier products.
Design Kits Now Available for 130nm SiGe BiCMOS Technology Manufactured in Both US and Israeli Fabs Targeting Wireless RF and TV Tuner Markets
The 100 millionth SiGe chip was produced at IBM's Burlington, Vermont facility, the company's primary chip manufacturing site and exclusive IBM SiGe production facility, and was delivered to Tektronix (NYSE:TEK), a world leader in advanced test, measurement and monitoring equipment.
SiGe Semiconductor signed an agreement with Insight Memec as part of its strategy to expand global distribution channels.
HEILBRONN, Germany -- TELEFUNKEN Semiconductors announced today that they have achieved a run rate of >100 million units per year supply to their customers of high performance SiGe power ICs utilizing HBT technology.