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strained silicon |
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A technique that deposits silicon (Si) on top of silicon germanium (SiGe) for making transistors on a chip. In so doing, the silicon atoms are stretched ("strained") to line up with the silicon germanium atoms, which are wider apart. This causes less resistance in the silicon and increases performance. AmberWave Systems Corporation, Salem, NH (www.amberwave.com) is a pioneer in this technology. In 2003, IBM announced it could make strained silicon with silicon crystals instead of germanium, making it considerably easier to manufacture. See silicon germanium.
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7TH INNING STRETCH Strained silicon has become ready for the production line at just the right time. IBM has developed the first transistor using strained silicon directly on insulator (SSDOI) technology that provides high performance while eliminating manufacturing problems. The Intel chips will use a number of promising chip technologies, including strained silicon, 50nm (gate length) transistors, copper interconnects, and a new low-k dielectric material called carbon-doped oxide (CDO) which, according to Intel, increases signal speed inside the chip and also reduces power consumption. |
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strained silicon
