Microwave absorbing properties can be modulated simply by controlling the content of PANI and the effect of V
dopant on the samples for the required frequency bands.
From this, [E.sub.gap] values decrease with increasing
dopant concentration.
The binary
dopant system was prepared by dissolving SDS in 1 M aqueous HCl solution to a concentration of 5 mM.
Ostling, "Fully depleted UTB and trigate N-channel MOSFETs featuring low-temperature PtSi Schottky-barrier contacts with
dopant segregation," IEEE Electron Device Letters, vol.
For studying the simultaneous interaction between impurities and oxygen vacancies, we detach the nearest surface oxygen atom to the
dopant on the doped Ti[O.sub.2] (101); in the pristine Ti[O.sub.2] surface, we removed the same oxygen for comparison (see Figure 1(b)).
The
dopant, a ruthenium-containing compound, is a reducing agent, which means it adds electrons to the organic semiconductor as part of the doping process.
The Raman spectra of Zn doped CdS thin films prepared with different
dopant concentrations at is shown in fig.5.
It is worth noting that we have also tried to use Al or Ga for inducing acceptor
dopant; however, carrier concentrations of grown film were all under [10.sup.17] [cm.sup.-3], and further increasing of
dopants always resulted in obstacle of epitaxy.
In this article we investigate the possibility to use SCM for 2-D and 3-D "atomistic"
dopant profiling of semiconductor materials.
Dopant owns physical properties like higher ionic radii mobility and preference occupancy were the reasons for generation impurity phases.
We describe here for the first time a general supramolecular approach toward controlled in situ synthesis of one-dimensional nanostructured conductive hydrogels (polypyrrole [PPy] as a model system) using a rational
dopant counterion, which is a disc-shaped liquid crystal molecular copper phthalocyanine-3,4',4",4"'-tetrasulfonic acid tetrasodium salt (CuPcTs).