[4] Musolf J (1997)
MOCVD with gas phase composition control for the growth of high quality YBa2Cu3O7-x thin films for microwave applications.
[2]
MOCVD method: Metal Organic Chemical Vapor Deposition method.
The research efforts driven by these firms reached a fever pitch in the 1990s, when Nortel eventually had an operation that housed eight
MOCVD reactors that could simultaneously process eight 7Vi centimetre-wide wafers.
"Hydrogen is used as a carrier for the chemicals used in the growth of the LEDs and the
MOCVD tools have all sorts of interlock capabilities," adds Snaith.
By contrast, the metal organic chemical vapor deposition (
MOCVD) method has been extended to the preparation ofnoble metal supported catalysts in a single step.
Based on previous reports [6-8], InGaN/GaN epilayers with high crystal quality can be achieved by using metalorganic chemical vapor deposition (
MOCVD) on a cone-shaped PSS.
The leading processes are atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), and metal-organic chemical vapor deposition (
MOCVD).
Using
MOCVD (metal-organic chemical vapor deposition) to analyze the growth of GaN-base photoelectric devices on the sapphire substrate is a common method in the semiconductor lighting industry [1-5].
The InGaN/GaN MQWs green LED structure (as shown in Figure 1) was grown on silicon (111) substrate by Thomas Swan 6 x 2"
MOCVD with close-coupled showerhead reactor.