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Schottky diode

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Schottky diode

[′shät·kē ′dī‚ōd]
(electronics)
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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References in periodicals archive
Guo, "5.8GHz circularly polarized rectennas using Schottky diode and LTC5535 rectifier for RF energy harvesting," in 2009 Asia Pacific Microwave Conference, pp.
A huge voltage drop cannot be accepted; thus CMOS diodes or Schottky diodes must be avoided.
The MP4062 SRD in the P2 package [7]and BAT62-03W Schottky Diode (SD) in the SOD-323 package [8]are used in the SRD pulse forming circuit.
The device under test, a HSMS 2850 Schottky diode from Agilent Technologies, is placed on a microstrip line.
Among the topics are rare earth metals and their complexes in organic LEDs, characterizing light emitting conjugated polymers by electrochemical methods, novel applications of absorbence-based LED optical devices, device architectures for high efficiency in phosphorescent organic LEDs, utilizing LED technology for arthropod pest control, recent progress in a green LED based on ZnTe, titanium-germanium nanocomposite for next-generation LED, an original means of improving gas sensor applications based on Schottky diodes, and SiC and GaN Schottky diodes.
The electrical parameters of a Schottky diode having series resistance can be determined by the following Cheung functions (30):
Schottky diode is chosen as a conversion device for the analysis of rectenna system in this study.
Additionally, with its third-generation, Infineon provides the industry's broadest SiC Schottky diode portfolio which not only includes the TO-220 package (2-pin version) but also the DPAK package for high power density surface mount designs.Main application areas for SiC Schottky diodes are active Power Factor Correction (CCM PFC) in Switched-Mode Power Supplies (SMPS) and other AC/DC and DC/DC power conversion applications such as solar inverters and motor drives.
As the metal work functions of the gold and carbon are 5.34 eV and 5.1 eV, respectively, and the BN is of p-type (as determined by the hot probe technique) with barrier height of 9.64 eV [9], the Au/BN represent a Schottky diode and the C/BN represent another Schottky diode.
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