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high-electron-mobility transistor

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high-electron-mobility transistor

[′hī i′lek‚trän mō¦bil·əd·ē tran‚zis·tər]
(electronics)
A type of field-effect transistor consisting of gallium arsenide and gallium aluminum arsenide, with a Schottky metal contact on the gallium aluminum arsenide layer and two ohmic contacts penetrating into the gallium arsenide layer, serving as the gate, source, and drain respectively. Abbreviated HEMT. Also known as heterojunction field-effect transistor (HFET); modulation-doped field-effect transistor (MODFET); selectively doped heterojunction transistor (SDHT); two-dimensional electron gas field-effect transistor (TEGFET).
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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References in periodicals archive
Regan et al., "Ultrahigh-speed GaN high-electron-mobility transistors with fTfmax of 454/444 GHz," IEEE Electron Device Letters, vol.
Danesin et al., "Reliability of GaN high-electron-mobility transistors: State of the art and perspectives," IEEE Transactions on Device and Materials Reliability, vol.
Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure
Lu, "Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors," Journal of Applied Physics, vol.
Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN/GaN HEMTs
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