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insulated-gate bipolar transistor

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insulated-gate bipolar transistor

[¦in·sə‚lād·əd‚gāt bī‚pō·lər tran′zis·tər]
(electronics)
A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of a p-type region and an n-type region, but differs from the MOSFET in the use of a p + substrate layer (in the case of an n-channel device) for the drain. The effect is to change the transistor into a bipolar device, as this p-type region injects holes into the n-type drift region. Abbreviated IGBT.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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References in periodicals archive
The inverter is equipped with a compact, high-efficiency power module with double-sided cooling and a built-in next-generation insulated-gate bipolar transistor. The power density output of this inverter has been increased 160 percent compared to the earlier generation of inverters.
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Equipped with insulated-gate bipolar transistor (IGBT) based propulsion technology, these locomotives will be compliant with Indian standards of freight transport and will have the ability to endure tough Indian climate and conditions.
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The systems' insulated-gate bipolar transistor (IGBT) inverter technology assures high-efficiency UPS operation, reducing cooling costs and lengthening UPS service life.
New range of Modular 3-Phase UPS Systems introduced by Tripp Lite
They have retained the basic physics of classic devices and added material on such areas of contemporary interest as three-dimensional MOSFETs (metal-oxide-semiconductor field-effect transistors), nonvolatile memory, modulation-doped field effect transistor, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor, quantum cascade laser, and semiconductor sensors.
Physics of semiconductor devices, 3d ed
Two technologies instrumental in Dana receiving the honour were the company's Long(R) ThermaTEK insulated-gate bipolar transistor cooling solutions and Long(R) battery cold plates.
Dana named Outstanding Thermal Management Solutions Supplier of the Year
The Information Network sees insulated-gate bipolar transistor (IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) as the main growth drivers of the overall power semiconductor market.
Infineon Maintains Leading Position in Power Semiconductors But Edged Out of MOSFET Sector by International Rectifier Says The Information Network
The company has been recognised for its Long(R) ThermaTEK insulated-gate bipolar transistor (IGBT) cooling solutions.
Dana receives 2018 Outstanding Power Electronics Solution Provider honour
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