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NEC's MFF operations were produced by integrating data flip flop (DFF) with
magnetic tunnel junctions (MTJ), in addition to circuits that switch the direction of MTJ's magnetization.
TEHRAN (FNA)- Researchers have successfully developed a technology to stack
magnetic tunnel junctions directly on the vertical interconnect access.
The 11 papers include discussions of developments in magneto-resistance memory:
magnetic tunnel junctions with a composite free layer, graphene active plasmonics for new types of terahertz lasers, deep ultraviolet light-emitting diodes for public health applications, novel cascade diode lasers based on type-I quantum wells, vertical conduction in the new field effect transistors: p-type and n-type vertical channel thin film transistors, and reflections on the future electric power grid monitoring system.