The [TDD.sub.CGB] is fixed to [10.sup.6] [cm.sup.-2] although this has no influence on the performance of the device because transport is a
majority carrier phenomenon.
Baskys, "The model of the p-n junction depletion region v-i characteristic considering the dependence of concentration of
majority carriers on voltage", in Proc.
Since saturation velocity decreases with increasing temperature in a
majority carrier device, the SIT channel is thermally stable.
Since
majority carriers are asymptomatic they pose a real threat to health personnel we well as other patients.
The total current I, starting the flow from the anode region 1 p and reaching the cathode region [n.sub.2] is influenced by the integral coefficient of the
majority carriers (holes for pnpn structures and electrons for the npnp structures) injection of junction J1, by the integral transfer coefficient of the minority carriers (holes for pnpn structures and electrons for the npnp structures) through wide base, and by the avalanche multiplication of charge carriers, taking place in the collector junction at relatively high forward voltages.
A strong DC bias causes
majority carriers in the substrate to accumulate near the insulator interface.
This relative minimum occurs because of the reduction of minority carrier (electron) scattering from plasmons associated with
majority carriers (holes) and because of the removal of
majority carriers (holes) from scattering the minority carriers (electrons) due to the Pauli exclusion principle for the
majority carriers (holes).