metal oxide semiconductor field-effect transistor
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metal oxide semiconductor field-effect transistor
[′med·əl ¦äk‚sīd ′sem·i·kən‚dək·tər ′fēld i‚fekt tran′zis·tər] (electronics)
A field-effect transistor having a gate that is insulated from the semiconductor substrate by a thin layer of silicon dioxide. Abbreviated MOSFET; MOST; MOS transistor. Formerly known as insulated-gate field-effect transistor (IGFET).
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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