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vapor-phase epitaxy

vapor-phase epitaxy

[′vā·pər ¦fāz ′ep·ə‚tak·sē]
(solid-state physics)
The use of chemical vapor deposition to grow epitaxial layers. Abbreviated VPE.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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References in periodicals archive
Zhilyaev et al., "Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer," Technical Physics Letters, vol.
MBE Growth and Optical Properties of GaN, InN, and [A.sup.3][B.sup.5] Nanowires on SiC/Si(111) Hybrid Substrate
Stringfellow, "Organometallic vapor-phase epitaxy growth and characterization of Bi-containing III/V alloys," Journal of Applied Physics, vol.
Valence band structure of In[As.sub.1-x][Bi.sub.x] and in[Sb.sub.1-x][B.sub.ix] alloy semiconductors calculated using valence band anticrossing model
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