In order for these specific primers to anneal, the template material must be single-stranded (ssDNA).
This makes the nascent strand ssDNA, allowing the opposing primer (Primer l in Figure 2c) to anneal, and DNA polymerase to again start strand synthesis.
Where no product is formed, the probe cannot anneal
and is chemically degraded by the detection procedure without emitting a signal.
The Vantage Astra system's novel, laser-based architecture sets new standards for production-worthiness and provides a compelling value proposition for advanced anneal
The customer is using the Summit systems for all annealing processes in the 130nm technology node, as well as for development of next-generation advanced silicide anneal
applications beginning in the 90nm technology node.
The formation of ultra-shallow junctions, for example, requires precise, rapid (spike) implant anneals that limit high temperature exposure of the wafer to a few seconds.
Rapid ramp (250(degree)C/s) and cool-down (90(degree)C/s) rates limit thermal exposure of the wafer to less than 3 seconds above 950(degree)C for a 1050(degree)C spike anneal.
Hollands continued, "Specifically, the AST 3000's ability to offer superior temperature measurement and control capabilities, along with excellent temperature uniformity for fast-ramp spike anneals
-- all backed by STEAG's strong service and support presence in Taiwan -- were critical factors in these two purchasing decisions.
The system provides a full suite of leading edge applications that include silicides, TiSi2 or CoSi2; implant anneals
, ultra-shallow junctions without "spike anneals
"; high k dielectric anneals
(Ta2O5, BST, SBT); glass reflow and/or densification (BPSG, PSG); curing of low k films; and low-temperature copper anneal
These include transition-critical applications such as advanced dielectrics, pre- and post-tantalum pentoxide anneals
, cobalt silicide, source/drain anneals
, implant annealing, silicides, thin oxides and nitrides.
The significance of this feature has been verified at TI by demonstrated device speed and performance improvements for implant and silicide anneals