avalanche breakdown


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avalanche breakdown

[′av·ə‚lanch ′brāk‚dau̇n]
(electronics)
Nondestructive breakdown in a semiconductor diode when the electric field across the barrier region is strong enough so that current carriers collide with valence electrons to produce ionization and cumulative multiplication of carriers.
References in periodicals archive ?
SP4208 Series TVS Diode Arrays (SPA Diodes) integrate low capacitance steering diodes with either one avalanche breakdown diode (for unidirectional protection) or two (for bidirectional protection).
The company offers a product line of overvoltage protection and overcurrent protection components, which include transient voltage suppressors (TVS arrays), avalanche breakdown diodes, steering diode TVS arrays, PPTC devices, and electronics SMD chip fuses.
Electronic circuits, employing bipolar junction transistors biased into the avalanche breakdown region are known for many years [1], [2].
6], is that not only the transistors, specially designed as the avalanche devices, but many bipolar junction transistors exhibit good performance in the avalanche breakdown region.
Avionics TVSs are invariably semiconductor devices, such as avalanche breakdown diodes (ABDs).
The sharp decrease in the value of insulation resistance after some time was expected to be governed by the avalanche breakdown (ABD) of the dielectric.
A good test might well be to simulate both the avalanche condition created by the poor bipolar layout and the hot electron effect by screening the device with a relatively high current in the avalanche breakdown mode, as shown in Figure 5.
Packaged in a standard TO-257 package, these devices showed stable avalanche breakdown above 800 V.
today released a new bidirectional and symmetrical (BiAs) single-line ESD protection diode for portable electronics that provides a reverse avalanche breakdown voltage above 15.
When the stress voltage reaches the avalanche breakdown of the drain, current begins to flow.
The diode is mounted upside down so that a positive voltage applied to the package lid is reverse bias for the P/N junction, as IMPATT diodes are always operated in reverse avalanche breakdown.
These Avalanche Breakdown Diodes (ABD) use solid-state silicon-based technology and provide low clamping voltage characteristics.